Monte Carlo simulation of growth of porous SiOx by vapor deposition.
A random network model containing defects has been developed and applied to the deposition of amorphous SiOx films on a flat substrate. A new Monte Carlo procedure enables dangling bonds to migrate and annihilate. The degree of porosity in the films is found to increase with oxygen content. As the o...
| मुख्य लेखकों: | , , , |
|---|---|
| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
2001
|