Monte Carlo simulation of growth of porous SiOx by vapor deposition.
A random network model containing defects has been developed and applied to the deposition of amorphous SiOx films on a flat substrate. A new Monte Carlo procedure enables dangling bonds to migrate and annihilate. The degree of porosity in the films is found to increase with oxygen content. As the o...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
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2001
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| _version_ | 1826274707127664640 |
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| author | Burlakov, V Briggs, G Sutton, A Tsukahara, Y |
| author_facet | Burlakov, V Briggs, G Sutton, A Tsukahara, Y |
| author_sort | Burlakov, V |
| collection | OXFORD |
| description | A random network model containing defects has been developed and applied to the deposition of amorphous SiOx films on a flat substrate. A new Monte Carlo procedure enables dangling bonds to migrate and annihilate. The degree of porosity in the films is found to increase with oxygen content. As the oxygen content increases a larger fraction of pore surfaces is covered with oxygen, and the density of dangling bonds on pore surfaces decreases. Oxygen plays the role of a surfactant, lowering the energies of pore surfaces and enhancing the porosity of amorphous SiO2 compared to amorphous Si. |
| first_indexed | 2024-03-06T22:47:33Z |
| format | Journal article |
| id | oxford-uuid:5dafa00f-e432-415c-b88d-c7acaa68d8e9 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T22:47:33Z |
| publishDate | 2001 |
| record_format | dspace |
| spelling | oxford-uuid:5dafa00f-e432-415c-b88d-c7acaa68d8e92022-03-26T17:35:59ZMonte Carlo simulation of growth of porous SiOx by vapor deposition.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:5dafa00f-e432-415c-b88d-c7acaa68d8e9EnglishSymplectic Elements at Oxford2001Burlakov, VBriggs, GSutton, ATsukahara, YA random network model containing defects has been developed and applied to the deposition of amorphous SiOx films on a flat substrate. A new Monte Carlo procedure enables dangling bonds to migrate and annihilate. The degree of porosity in the films is found to increase with oxygen content. As the oxygen content increases a larger fraction of pore surfaces is covered with oxygen, and the density of dangling bonds on pore surfaces decreases. Oxygen plays the role of a surfactant, lowering the energies of pore surfaces and enhancing the porosity of amorphous SiO2 compared to amorphous Si. |
| spellingShingle | Burlakov, V Briggs, G Sutton, A Tsukahara, Y Monte Carlo simulation of growth of porous SiOx by vapor deposition. |
| title | Monte Carlo simulation of growth of porous SiOx by vapor deposition. |
| title_full | Monte Carlo simulation of growth of porous SiOx by vapor deposition. |
| title_fullStr | Monte Carlo simulation of growth of porous SiOx by vapor deposition. |
| title_full_unstemmed | Monte Carlo simulation of growth of porous SiOx by vapor deposition. |
| title_short | Monte Carlo simulation of growth of porous SiOx by vapor deposition. |
| title_sort | monte carlo simulation of growth of porous siox by vapor deposition |
| work_keys_str_mv | AT burlakovv montecarlosimulationofgrowthofporoussioxbyvapordeposition AT briggsg montecarlosimulationofgrowthofporoussioxbyvapordeposition AT suttona montecarlosimulationofgrowthofporoussioxbyvapordeposition AT tsukaharay montecarlosimulationofgrowthofporoussioxbyvapordeposition |