The effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-xSi(0 0 1) gas-source growth

समान संसाधन

• Reduction of dislocation mobility in GexSi1-x epilayers
  द्वारा: Jurkschat, K, और अन्य
  प्रकाशित: (1996)
• The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
  द्वारा: Glasko, J, और अन्य
  प्रकाशित: (1997)
• A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial GeXSi1-X on Si
  द्वारा: Hirsch, P
  प्रकाशित: (1997)
• The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
  द्वारा: Glasko, J, और अन्य
  प्रकाशित: (1996)
• Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
  द्वारा: Brehm Moritz, और अन्य
  प्रकाशित: (2011-01-01)