The effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-xSi(0 0 1) gas-source growth

The effect of mismatch strain on Stranski-Krastanow transition in epitaxial GexSi1-xSi(0 0 1) gas-source growth

Manylion Llyfryddiaeth
Prif Awduron:	Goldfarb, I, Briggs, G
Fformat:	Conference item
Cyhoeddwyd:	1999

Eitemau Tebyg

Reduction of dislocation mobility in GexSi1-x epilayers
gan: Jurkschat, K, et al.
Cyhoeddwyd: (1996)

The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
gan: Glasko, J, et al.
Cyhoeddwyd: (1997)

A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial GeXSi1-X on Si
gan: Hirsch, P
Cyhoeddwyd: (1997)

The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures
gan: Glasko, J, et al.
Cyhoeddwyd: (1996)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
gan: Brehm Moritz, et al.
Cyhoeddwyd: (2011-01-01)

Self-Diffusion of Ge in Amorphous GexSi1–x Films Studied In Situ by Neutron Reflectometry
gan: Erwin Hüger, et al.
Cyhoeddwyd: (2024-07-01)

Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics
gan: Nurulla F. Zikrillaev, et al.
Cyhoeddwyd: (2023-09-01)

Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs Quantum dots grown by stranski krastanow growth modes /
gan: Didik Aryanto, 1983- author, et al.
Cyhoeddwyd: (2009)

Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs quantum dots grown by stranski-krastanow growth modes
gan: Aryanto, Didik, et al.
Cyhoeddwyd: (2009)

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
gan: Lobo, C, et al.
Cyhoeddwyd: (2000)

Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si
gan: Trevor R. Smith, et al.
Cyhoeddwyd: (2025-02-01)

Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation
gan: Wellman, J, et al.
Cyhoeddwyd: (1999)

Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
gan: Setiawan, Y., et al.
Cyhoeddwyd: (2012)

Effect of cooling rate on the microstructure and corrosion properties of Zn-5Al-0.1RE-xSi alloys
gan: TU Hao, et al.
Cyhoeddwyd: (2016-08-01)

Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
gan: Pey, Kin Leong, et al.
Cyhoeddwyd: (2012)

Ellipsometric study of Si1-x Gex alloy
gan: Paiman, Suriati, et al.
Cyhoeddwyd: (2003)

The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge
gan: Jin, Lijuan, et al.
Cyhoeddwyd: (2003)

Study of the magnetostructural transition in critical-element free Mn1−xNi1−xFe2xSi0.95Al0.05
gan: Bruno G. F. Eggert, et al.
Cyhoeddwyd: (2023-02-01)

In-line Si1-xGex epitaxial process monitoring and diagnostics using multiwavelength high resolution micro-Raman spectroscopy
gan: Chun-Wei Chang, et al.
Cyhoeddwyd: (2012-06-01)

Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
gan: Wedler, G, et al.
Cyhoeddwyd: (1998)

Introduction of the structure, modeling and analysis of junctionless heterostructure Si/Si1-xGex transistor
gan: reyhaneh ejlali, et al.
Cyhoeddwyd: (2023-03-01)

Anode Properties of CrxV1–xSi2/Si Composite Electrodes for Lithium-Ion Batteries
gan: Yuta Kimura, et al.
Cyhoeddwyd: (2021-03-01)

Textured Ni(Pt) germanosilicide formation on a condensed Si1-xGex/Si substrate
gan: Setiawan, Y., et al.
Cyhoeddwyd: (2012)

The magnetic and magnetocaloric properties of Al-rich Al0.85+xSi0.15Fe2B2 compounds prepared by drop-casting
gan: Kyra Stillwell, et al.
Cyhoeddwyd: (2023-02-01)

Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal
gan: Goldfarb, I, et al.
Cyhoeddwyd: (1999)

Highly lattice-mismatched epitaxy for III-V/Si integration
gan: Jia, Bowen
Cyhoeddwyd: (2018)

Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer
gan: Gnilenko A. B., et al.
Cyhoeddwyd: (2015-12-01)

Strained-Si1-xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior
gan: Nayfeh, Osama M., et al.
Cyhoeddwyd: (2010)

Si1–xGex nanocrystals as sensitive elements for magnetic field and temperature sensors
gan: Druzhinin А. A., et al.
Cyhoeddwyd: (2012-10-01)

Crystal structure of calcium zinc silicide, CaZnxSi2-x (x = 0.80), and strontium germanium silicide, SrGexSi2-x (x = 1.20)
gan: Xie Q.-X., et al.
Cyhoeddwyd: (2004-04-01)

Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates
gan: Setiawan, Y., et al.
Cyhoeddwyd: (2012)

Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si1-xGex system/
gan: 285965 Sun, X., et al.

Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode
gan: Didik Aryanto,, et al.
Cyhoeddwyd: (2010)

KOMPOSISI, STRUKTUR DAN DENSITAS PADUAN U-7Mo-xSi
gan: Supardjo Supardjo, et al.
Cyhoeddwyd: (2021-06-01)

Crystal structures of Ca4+xY3–xSi7O15+xN5–x(0 ≤ x ≤ 1) comprising of an isolated [Si7(O,N)19] unit
gan: Makoto Kobayashi, et al.
Cyhoeddwyd: (2019-02-01)

Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD
gan: Yu Wang, et al.
Cyhoeddwyd: (2015-11-01)

Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate
gan: Li, Y. S., et al.
Cyhoeddwyd: (2013)

Influence of composition and substrate miscut on the evolution of {105}-terminated in-plane Si1−xGex quantum wires on Si(001)
gan: H. Watzinger, et al.
Cyhoeddwyd: (2014-07-01)

Contactless monitoring of Ge content and B concentration in ultrathin single and double layer Si1-xGex epitaxial films using multiwavelength micro-Raman spectroscopy
gan: Chun-Wei Chang, et al.
Cyhoeddwyd: (2012-03-01)

SiGe and Si strained-layer epitaxy for silicon heterostructure devices /
gan: Cressler, John D.
Cyhoeddwyd: (2008)