Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minim...
| Main Authors: | , , , , |
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| Format: | Conference item |
| Published: |
2006
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