THEORETICAL INVESTIGATIONS OF COMBINED CL AND EBIC MEASUREMENTS ON CRYSTAL DEFECTS

Documenti analoghi

• COMBINED APPLICATION OF SEM-CL AND SEM-EBIC FOR THE INVESTIGATION OF COMPOUND SEMICONDUCTORS
  di: Schreiber, J, et al.
  Pubblicazione: (1989)
• ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS
  di: Blumtritt, H, et al.
  Pubblicazione: (1989)
• EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
  di: Wilshaw, P, et al.
  Pubblicazione: (1991)
• Junction depth & defect characterization with the use of EBIC
  di: Phua, Poh Chin.
  Pubblicazione: (2008)
• THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
  di: Wilshaw, P
  Pubblicazione: (1989)