III-V compound semiconductor nanowires
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs...
| Main Authors: | , , , , , , , , , , |
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| Format: | Conference item |
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2009
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