Broadband single-nanowire photoconductive Terahertz detectors

Broadband single-nanowire photoconductive Terahertz detectors

Broadband photoconductive terahertz detectors based on undoped InP single nanowires were demonstrated. By further design and growth of an axial n+-i-n+ structure to reduce the contact resistance, highly-sensitive n+-i-n+ InP single-nanowire terahertz detectors were achieved.

Бібліографічні деталі
Автори: Peng, K, Parkinson, P, Gao, Q, Boland, JL, Li, Z, Wang, F, Wenas, YC, Davies, CL, Fu, L, Johnston, MB, Tan, HH, Jagadish, C, Ieee
Формат: Conference item
Опубліковано: Optical Society of America 2017

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