| Итог: | Wide-band-gap power devices, such as Gallium Nitride High Electron Mobility Transistors and Silicon Carbide Field-effect Transistors, offer impressively fast switching performance compared to their traditional Silicon counterparts. However, Si designs have not stood still, and new generations of these devices offer good switching performance at competitive prices. This paper makes a comparative study between a representative selection of 650 V SiC MOSFET, GaN HEMT, and Si IGBT power switching devices. The devices are switched as fast as possible using a low inductance PCB design and no external gate resistors. A mathematical analysis of switching energy losses is presented, along with SPICE simulation and experimental test results for comparison.
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