Fast switching of high current WBG power devices
Wide-band-gap power devices, such as Gallium Nitride High Electron Mobility Transistors and Silicon Carbide Field-effect Transistors, offer impressively fast switching performance compared to their traditional Silicon counterparts. However, Si designs have not stood still, and new generations of the...
| Hlavní autoři: | , , , , , , , |
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| Médium: | Conference item |
| Jazyk: | English |
| Vydáno: |
VDE Verlag
2022
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