Phase separation in thick InGaN layers - A quantitative, nanoscale study by pulsed laser atom probe tomography
Pulsed laser atom probe tomography was employed to study 300 nm thick In 0.25Ga 0.75N layers grown on a GaN buffer layer. The unique three-dimensional data provided by atom probe tomography revealed a complex microstructure in the InGaN formed by indium-rich columns and plates adjacent to strongly i...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2012
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