Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal article |
| Published: |
2013
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