Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs
We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this s...
| Những tác giả chính: | , , , , , |
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| Định dạng: | Conference item |
| Được phát hành: |
1998
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