Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs
We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this s...
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Bibliographic Details
| Main Authors: |
Lakrimi, M,
Rehman, J,
Symons, D,
Nicholas, R,
Mason, N,
Walker, P |
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| Format: | Conference item
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| Published: |
1998
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