Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs
We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this s...
| Main Authors: | , , , , , |
|---|---|
| Format: | Conference item |
| Published: |
1998
|
| _version_ | 1797072717536559104 |
|---|---|
| author | Lakrimi, M Rehman, J Symons, D Nicholas, R Mason, N Walker, P |
| author_facet | Lakrimi, M Rehman, J Symons, D Nicholas, R Mason, N Walker, P |
| author_sort | Lakrimi, M |
| collection | OXFORD |
| description | We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this system. When a parallel magnetic field is increased from 0 to 12 T, the resistivity drops by 60% when the Fermi energy is in the middle of the minigap, but by less ;than 3% when the Fermi energy is positioned outside the minigap. (C) 1998 Elsevier Science B.V. All rights reserved. |
| first_indexed | 2024-03-06T23:11:41Z |
| format | Conference item |
| id | oxford-uuid:65b2659c-d540-488f-94ca-6f697c6aa450 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T23:11:41Z |
| publishDate | 1998 |
| record_format | dspace |
| spelling | oxford-uuid:65b2659c-d540-488f-94ca-6f697c6aa4502022-03-26T18:27:06ZPerpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:65b2659c-d540-488f-94ca-6f697c6aa450Symplectic Elements at Oxford1998Lakrimi, MRehman, JSymons, DNicholas, RMason, NWalker, PWe have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this system. When a parallel magnetic field is increased from 0 to 12 T, the resistivity drops by 60% when the Fermi energy is in the middle of the minigap, but by less ;than 3% when the Fermi energy is positioned outside the minigap. (C) 1998 Elsevier Science B.V. All rights reserved. |
| spellingShingle | Lakrimi, M Rehman, J Symons, D Nicholas, R Mason, N Walker, P Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs |
| title | Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs |
| title_full | Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs |
| title_fullStr | Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs |
| title_full_unstemmed | Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs |
| title_short | Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs |
| title_sort | perpendicular and parallel magnetic field transport measurements in gated inas gasb dhets |
| work_keys_str_mv | AT lakrimim perpendicularandparallelmagneticfieldtransportmeasurementsingatedinasgasbdhets AT rehmanj perpendicularandparallelmagneticfieldtransportmeasurementsingatedinasgasbdhets AT symonsd perpendicularandparallelmagneticfieldtransportmeasurementsingatedinasgasbdhets AT nicholasr perpendicularandparallelmagneticfieldtransportmeasurementsingatedinasgasbdhets AT masonn perpendicularandparallelmagneticfieldtransportmeasurementsingatedinasgasbdhets AT walkerp perpendicularandparallelmagneticfieldtransportmeasurementsingatedinasgasbdhets |