Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced "cut-off" at E-LO is observed for up to similar to 3 ps after photoexcitation. Monte Carlo simulations show that this be...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
| Published: |
1999
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