Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects

Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects

Čájet eará veršuvnnaid (1)

Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced "cut-off" at E-LO is observed for up to similar to 3 ps after photoexcitation. Monte Carlo simulations show that this be...

Bibliográfalaš dieđut
Váldodahkkit:	O'Sullivan, E, Hess, S, Taylor, R, Cain, N, Roberts, V, Roberts, J, Ryan, J
Materiálatiipa:	Conference item
Almmustuhtton:	1999

Geahča maid

Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
Dahkki: O'Sullivan, E, et al.
Almmustuhtton: (1999)

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Dahkki: Hess, S, et al.
Almmustuhtton: (1999)

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Dahkki: Hess, S, et al.
Almmustuhtton: (1999)

Hot phonons and non-thermal carrier states in GaN
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2002)

Hot phonons and non-thermal carrier states in GaN
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2002)

Hot carrier dynamics and carrier-phonon interaction in GaN
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Almmustuhtton: (2005)

Dynamics of resonantly excited excitons in GaN
Dahkki: Hess, S, et al.
Almmustuhtton: (1998)

Dynamics of resonantly excited excitons in GaN
Dahkki: Hess, S, et al.
Almmustuhtton: (1998)

Comparison of exciton-biexciton with bound exciton-biexciton dynamics in GaN: Quantum beats and temperature dependence of the acoustic-phonon interaction
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2001)

Comparison of exciton-biexciton with bound exciton-biexciton dynamics in GaN: Quantum beats and temperature dependence of the acoustic-phonon interaction
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2001)

Time-resolved bandgap renormalization and gain in GaN epilayers
Dahkki: Hess, S, et al.
Almmustuhtton: (1998)

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2006)

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2006)

MEASUREMENTS OF HOT CARRIER RELAXATION AND RECOMBINATION IN GaAs QUANTUM WELLS BY PICOSECOND OPTICAL PROBING.
Dahkki: Ryan, J, et al.
Almmustuhtton: (1984)

Coherent exciton-biexciton dynamics in GaN
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2002)

Coherent exciton-biexciton dynamics in GaN
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2002)

Femtosecond exciton dynamics and the Mott transition in GaN under resonant excitation
Dahkki: Hess, S, et al.
Almmustuhtton: (1999)

Femtosecond exciton dynamics and the mott transition in GaN under resonant excitation
Dahkki: Hess, S, et al.
Almmustuhtton: (1999)

Quantum beats of free and bound excitons in GaN
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Almmustuhtton: (2001)

Quantum beats of free and bound excitons in GaN
Dahkki: Kyhm, K, et al.
Almmustuhtton: (2001)

Resonant LO phonon enhanced conductivity in GaAs-AlAs superlattices
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Almmustuhtton: (2001)

COMPETITION BETWEEN LO AND TO PHONON-SCATTERING IN GAAS/GAALAS HETEROJUNCTIONS
Dahkki: Brummell, M, et al.
Almmustuhtton: (1988)

Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation
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Almmustuhtton: (1999)

ELECTRON-LO-PHONON SCATTERING RATES IN GAAS-ALXGA1-XAS QUANTUM-WELLS
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Almmustuhtton: (1991)

Direct observation of femtosecond intervalley scattering in GaSb: Electron-phonon scattering and continuum coherent transients
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Almmustuhtton: (1997)

CARRIER-CONCENTATION-DEPENDENT ELECTRON LO-PHONON COUPLING OBSERVED IN GAAS-(GA,AL)AS HETEROJUNCTIONS BY RESONANT-POLARON CYCLOTRON-RESONANCE
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Almmustuhtton: (1988)

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
Dahkki: Holmes, M, et al.
Almmustuhtton: (2012)

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
Dahkki: Holmes, M, et al.
Almmustuhtton: (2012)

Optical gain in GaN epilayers
Dahkki: Hess, S, et al.
Almmustuhtton: (1998)

Optical gain in GaN epilayers
Dahkki: Hess, S, et al.
Almmustuhtton: (1998)

Investigation of inter-valley scattering and hot phonon dynamics in GaAs quantum wells using femtosecond luminescence intensity correlation
Dahkki: de Paula, A, et al.
Almmustuhtton: (1989)

Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods
Dahkki: Park, Y, et al.
Almmustuhtton: (2009)

Free excitons with n=2 in bulk GaN
Dahkki: Steube, M, et al.
Almmustuhtton: (1997)

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
Dahkki: Park, Y, et al.
Almmustuhtton: (2018)

Fabrication and Characterization of Nano-porous GaN Template for Strain Relaxed GaN Growth
Dahkki: Hartono, Haryono, et al.
Almmustuhtton: (2007)

GaN nanorods grown on Si (111) substrates and exciton localization.
Dahkki: Park, Y, et al.
Almmustuhtton: (2011)

Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS
Dahkki: Ryan, J, et al.
Almmustuhtton: (1986)

GaN nanorods grown on Si (111) substrates and exciton localization
Dahkki: Park, Y, et al.
Almmustuhtton: (2011)

Ultrafast optical absorption measurements of electron-phonon scattering in GaAs quantum wells
Dahkki: Turner, K, et al.
Almmustuhtton: (1996)

Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
Dahkki: Ryan, J, et al.
Almmustuhtton: (1984)