Surface ionisation of molecular H-2 and atomic H Rydberg states at doped silicon surfaces
The detection of ions or electrons from the surface ionisation of molecular H2 and atomic H Rydberg states incident at doped Si surfaces is investigated experimentally to analyse the effect of the dopant charge distribution on the surface-ionisation processes. In both experimental studies, the molec...
| المؤلفون الرئيسيون: | , , , |
|---|---|
| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
2014
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