Surface ionisation of molecular H-2 and atomic H Rydberg states at doped silicon surfaces
The detection of ions or electrons from the surface ionisation of molecular H2 and atomic H Rydberg states incident at doped Si surfaces is investigated experimentally to analyse the effect of the dopant charge distribution on the surface-ionisation processes. In both experimental studies, the molec...
| প্রধান লেখক: | , , , |
|---|---|
| বিন্যাস: | Journal article |
| ভাষা: | English |
| প্রকাশিত: |
2014
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Surface ionisation of molecular H2 and atomic H Rydberg states at doped silicon surfaces
প্রকাশিত 2014
Conference item