Domain Matching Epitaxial Growth of In2O3 Thin Films on alpha-Al2O3(0001)
Oxygen plasma assisted molecular beam epitaxy was used to grow thin films of In 2O 3 on α-Al 2O 3(0001) over a range of substrate temperatures between 300 and 750 °C. The crystal structures and morphologies were examined by X-ray diffraction, transmission electron microscopy, and atomic force micros...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Published: |
2012
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