Orthogonal tight binding model for silicon carbide

A new orthogonal tight binding (OTB) model for the silicon carbide (Si-C) system is presented. The model is parameterized in the reduced TB form which provides a critical step towards the development of an analytic bond-order potential (BOP) for Si-C. Coarse-grained from density functional theory (D...

Полное описание

Библиографические подробности
Главный автор: Kamenski, P
Другие авторы: Pettifor, D
Формат: Диссертация
Язык:English
Опубликовано: 2011
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