Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
A measurement of nitrogen out-diffusion from nitrogen-doped float-zone silicon made using a dislocation locking technique is presented. Specimens containing a well-defined array of dislocation half-loops are subjected to identical anneals at 750°C, during which nitrogen diffuses both to the surface...
| Main Authors: | , , , , , |
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| פורמט: | Journal article |
| שפה: | English |
| יצא לאור: |
2007
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