Neutron irradiation of silicon diodes at temperatures of +20°C and -20°C
We report measurements of the behaviour of silicon diodes when exposed to integrated neutron doses of up to 5×1013 neutrons/cm2. The measurements have been made at diode temperatures between room temperature and -20°C. From measurements of the diode leakage current and depletion voltage, and consequ...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1993
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