Controlling the carriers of topological insulators by bulk and surface doping
We report a systematic study of bulk and surface chemical doping effects on single Dirac cone topological insulator Bi2Se3 and Bi2Te3. By bulk doping, we were able to achieve full range control of charge carrier types and concentration, with the exact Fermi energy measured by angle-resolved photoemi...
| Κύριοι συγγραφείς: | , , , , , , , , , , , |
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| Μορφή: | Journal article |
| Γλώσσα: | English |
| Έκδοση: |
2012
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