Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion

Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate...

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Bibliographic Details
Main Authors: Schnabel, M, Weiss, C, Loeper, P, Canino, M, Summonte, C, Wilshaw, P, Janz, S
Format: Journal article
Language:English
Published: American Institute of Physics Inc. 2014