Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion
Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate...
| मुख्य लेखकों: | , , , , , , |
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| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
American Institute of Physics Inc.
2014
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