In-situ observation of stacking fault evolution in vacuum-deposited C60
We report an in-situ study of stacking fault evolution in C 60 thin films using grazing-incidence x-ray scattering (GIXS). A Williamson-Hall analysis of the main scattering features during growth of a 15 nm film on glass indicate lattice strain as high as 6% in the first 5 nm of the film, with a dec...
| Hlavní autoři: | , , , , |
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| Médium: | Journal article |
| Vydáno: |
AIP Publishing
2017
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| Shrnutí: | We report an in-situ study of stacking fault evolution in C 60 thin films using grazing-incidence x-ray scattering (GIXS). A Williamson-Hall analysis of the main scattering features during growth of a 15 nm film on glass indicate lattice strain as high as 6% in the first 5 nm of the film, with a decrease to 2% beyond 8 nm thickness. Deformation stacking faults along the {220} plane are found to occur with 68% probability, and closely linked to the formation of a nanocrystalline powder-like film. Our findings, which capture monolayer-resolution growth, are consistent with previous work on crystalline and powder C60 films and provide a crystallographic context for the realtime study of organic semiconductor thin films. |
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