GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.

InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Initially the interfaces of the SLS have been biased towards pairs of GaAs or InSb using three different gas switching sequences. Room temperature Raman optical modes s...

詳細記述

書誌詳細
主要な著者: Booker, G, Klipstein, P, Lakrimi, M, Lyapin, S, Mason, N, Murgatroyd, I, Nicholas, R, Seong, T, Symons, D, Walker, P
フォーマット: Conference item
出版事項: 1995