GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Initially the interfaces of the SLS have been biased towards pairs of GaAs or InSb using three different gas switching sequences. Room temperature Raman optical modes s...
| Main Authors: | , , , , , , , , , |
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| Format: | Conference item |
| Published: |
1995
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