GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Initially the interfaces of the SLS have been biased towards pairs of GaAs or InSb using three different gas switching sequences. Room temperature Raman optical modes s...
| Main Authors: | , , , , , , , , , |
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| Format: | Conference item |
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1995
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| _version_ | 1797074859288690688 |
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| author | Booker, G Klipstein, P Lakrimi, M Lyapin, S Mason, N Murgatroyd, I Nicholas, R Seong, T Symons, D Walker, P |
| author_facet | Booker, G Klipstein, P Lakrimi, M Lyapin, S Mason, N Murgatroyd, I Nicholas, R Seong, T Symons, D Walker, P |
| author_sort | Booker, G |
| collection | OXFORD |
| description | InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Initially the interfaces of the SLS have been biased towards pairs of GaAs or InSb using three different gas switching sequences. Room temperature Raman optical modes show that growing the interfaces using an ALE (atomic layer epitaxy) like switching sequence gives interfaces of very high quality probably near the optimum, which is a monolayer. Growing with other switching sequences leads to one of the interfaces being non-uniform. By growing samples with alternating (InSb,GaAs or GaAs,InSb) pairs of interfaces it is possible to unambiguously assign this non-uniformity to one of the two possible interfaces for the first time. Furthermore, the influence of the band overlap on interface type has been studied using optimised SLSs in the semimetallic regime. |
| first_indexed | 2024-03-06T23:42:19Z |
| format | Conference item |
| id | oxford-uuid:6fbeb37c-d844-4906-a050-68060abefa56 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T23:42:19Z |
| publishDate | 1995 |
| record_format | dspace |
| spelling | oxford-uuid:6fbeb37c-d844-4906-a050-68060abefa562022-03-26T19:32:36ZGROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.Conference itemhttp://purl.org/coar/resource_type/c_5794uuid:6fbeb37c-d844-4906-a050-68060abefa56Symplectic Elements at Oxford1995Booker, GKlipstein, PLakrimi, MLyapin, SMason, NMurgatroyd, INicholas, RSeong, TSymons, DWalker, PInAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Initially the interfaces of the SLS have been biased towards pairs of GaAs or InSb using three different gas switching sequences. Room temperature Raman optical modes show that growing the interfaces using an ALE (atomic layer epitaxy) like switching sequence gives interfaces of very high quality probably near the optimum, which is a monolayer. Growing with other switching sequences leads to one of the interfaces being non-uniform. By growing samples with alternating (InSb,GaAs or GaAs,InSb) pairs of interfaces it is possible to unambiguously assign this non-uniformity to one of the two possible interfaces for the first time. Furthermore, the influence of the band overlap on interface type has been studied using optimised SLSs in the semimetallic regime. |
| spellingShingle | Booker, G Klipstein, P Lakrimi, M Lyapin, S Mason, N Murgatroyd, I Nicholas, R Seong, T Symons, D Walker, P GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2. |
| title | GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2. |
| title_full | GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2. |
| title_fullStr | GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2. |
| title_full_unstemmed | GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2. |
| title_short | GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2. |
| title_sort | growth of inas gasb strained layer superlattices 2 |
| work_keys_str_mv | AT bookerg growthofinasgasbstrainedlayersuperlattices2 AT klipsteinp growthofinasgasbstrainedlayersuperlattices2 AT lakrimim growthofinasgasbstrainedlayersuperlattices2 AT lyapins growthofinasgasbstrainedlayersuperlattices2 AT masonn growthofinasgasbstrainedlayersuperlattices2 AT murgatroydi growthofinasgasbstrainedlayersuperlattices2 AT nicholasr growthofinasgasbstrainedlayersuperlattices2 AT seongt growthofinasgasbstrainedlayersuperlattices2 AT symonsd growthofinasgasbstrainedlayersuperlattices2 AT walkerp growthofinasgasbstrainedlayersuperlattices2 |