Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

Lignende værker

• Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
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• Characterisation of compound semiconductors grown by molecular beam epitaxy
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• The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers
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• Atom-probe tomography characterization of the oxidation of stainless steel
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• Atom-probe tomography characterization of the oxidation of stainless steel
  af: Lozano-Perez, S, et al.
  Udgivet: (2010)