Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

Eitemau Tebyg

• Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
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  Cyhoeddwyd: (2011)
• Characterisation of compound semiconductors grown by molecular beam epitaxy
  gan: Zhang, Peng Hua
  Cyhoeddwyd: (2009)
• The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers
  gan: Choi, Y, et al.
  Cyhoeddwyd: (2002)
• Atom-probe tomography characterization of the oxidation of stainless steel
  gan: Lozano-Perez, S, et al.
  Cyhoeddwyd: (2010)
• Atom-probe tomography characterization of the oxidation of stainless steel
  gan: Lozano-Perez, S, et al.
  Cyhoeddwyd: (2010)