Recombination at oxide precipitates in silicon
Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in p-type Czochralski silicon processed in very clean conditions to contain oxide precipitates. Precipitation treatments were varied to produce a matrix of samples, which were then characterised...
| 主要な著者: | , , , , , |
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| フォーマット: | Journal article |
| 言語: | English |
| 出版事項: |
Trans Tech Publications Ltd
2011
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