Recombination at oxide precipitates in silicon
Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in p-type Czochralski silicon processed in very clean conditions to contain oxide precipitates. Precipitation treatments were varied to produce a matrix of samples, which were then characterised...
| Главные авторы: | , , , , , |
|---|---|
| Формат: | Journal article |
| Язык: | English |
| Опубликовано: |
Trans Tech Publications Ltd
2011
|