GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

Taispeáin leaganacha eile (1)

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Decoteau, M, Wilshaw, P, Falster, R
Formáid:	Conference item
Foilsithe / Cruthaithe:	1991

Míreanna comhchosúla

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GETTERING IN SILICON
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Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process
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Methods and mechanisms of gettering of silicon structures in the production of integrated circuits
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Electron beam induced current investigations of transition metal impurities at extended defects in silicon
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DLTS characterization of aluminum gettering of iron contaminants in boron-doped silicon
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Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
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The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells
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Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon
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Transition metal gettering studies and simulation for the optimization of silicon photovoltaic device processing
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Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis
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Evaluation of Hydrogen Gettering Rates Correlated to Surface Composition and Texture of Nickel-Plated Zircaloy Getters of Different Heat Treatment Procedures
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Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics
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The segregation behaviour of oxygen at dislocations in silicon
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Locking of dislocations by oxygen in Cz-silicon
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High resolution deep level transient spectroscopy applied to extended defects in silicon
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Recombination at oxide precipitates in silicon
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Generation of dislocation glide loops in Czochralski silicon
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Dislocation locking by nitrogen impurities in FZ-silicon
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On the mechanism of recombination at oxide precipitates in silicon
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Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
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