Metal-insulator oscillations in a two-dimensional electron-hole system
The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating beha...
Main Authors: | Nicholas, R, Takashina, K, Lakrimi, M, Kardynal, B, Khym, S, Mason, N, Symons, D, Maude, D, Portal, J |
---|---|
פורמט: | Journal article |
שפה: | English |
יצא לאור: |
2000
|
פריטים דומים
-
Insulating states of a broken-gap two-dimensional electron-hole system
מאת: Takashina, K, et al.
יצא לאור: (2003) -
Insulating states of a 2-dimensional electron-hole system in high magnetic field
מאת: Takashina, K, et al.
יצא לאור: (2001) -
Edge effects in an insulating state of an electron-hole system in magnetic field
מאת: Takashina, K, et al.
יצא לאור: (2001) -
Breakdown of the quantum Hall effect in an electron-hole system
מאת: Takashina, K, et al.
יצא לאור: (2001) -
Electron-hole interactions and metal-insulator transitions in InAs/GaSb heterostructures
מאת: Nicholas, R, et al.
יצא לאור: (2001)