Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes
We report some of the highest 77 K peak to valley ratios (PVRs) for single heterojunction InAs(n)/GaSb(p) resonant conduction diodes. The devices were grown with low background doping (n ≈ p ≈ 1016 cm-3) on (100) oriented substrates by atmospheric pressure MOVPE, and were prepared by switching the p...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
1994
|