EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP

EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP

Manylion Llyfryddiaeth
Prif Awduron:	Nicholas, R, Portal, J, Houlbert, C, Perrier, P, Pearsall, T
Fformat:	Journal article
Cyhoeddwyd:	1979

Eitemau Tebyg

CYCLOTRON-RESONANCE AND THE MAGNETOPHONON EFFECT IN GAXIN1-XASYP1-Y
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A study of n-type GaxIn1-xAsyP1-y-InP quantum wells
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SHALLOW DONOR SPECTROSCOPY IN GAXIN1-XASYP1-Y
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EFFECTIVE MASSES AND NON-PARABOLICITY IN GAXIN1-XAS
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MECHANISTIC ASPECTS RELATING TO THE GROWTH OF GAXIN1-XAS BY CBE
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ATOMIC ORDERING IN SOLID SOLUTIONS GaxIn1-xP: EXPERIMENTAL STUDY OF THE STRUCTURAL AND MORPHOLOGICAL PROPERTIES
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OPTICAL PROPERTIES OF EPITAXIAL GaxIn1–xP SOLID SOLUTIONS WITH ATOMIC ORDERING
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RAMAN-SCATTERING IN INP1-XASX ALLOYS
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IMPURITY-ASSOCIATED MAGNETOPHONON RESONANCE IN N-TYPE SILICON
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InP and InGaAs grown on InP substrate by molecular beam epitaxy
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InP nanowires grown by SA-MOVPE
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Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 − xPySbzAs1 − y − z for the solar cells system
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MAGNETOTRANSPORT IN GAINAS-INP HETEROJUNCTIONS AND SUPER-LATTICES
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Photoluminescence of ingaas/inp grown by molecular beam epitaxy
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AN EXPERIMENTAL-DETERMINATION OF ENHANCED ELECTRON G-FACTORS IN GAINAS-AIINAS HETEROJUNCTIONS
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PRESSURE-DEPENDENCE STUDY OF THE EFFECTIVE MASS IN GA0.47IN0.53AS/INP HETEROJUNCTIONS
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TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP SUPER-LATTICES
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Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
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Native microdefects and as-grown dislocations in pure and doped InP crystals
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MAGNETOOPTICS AND STRAIN EFFECTS IN GAINAS-ALINAS AND GAINAS-INP QUANTUM-WELLS
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1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
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QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE
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Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
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MBE-grown long wavelength InGaAlAs/InP laser diodes
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Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice
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THE K.P INTERACTION IN INP AND GAAS FROM THE BAND-GAP DEPENDENCE OF THE EFFECTIVE MASS
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InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy
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Tuning adsorption properties of GaxIn2−xO3 catalysts for enhancement of methanol synthesis activity from CO2 hydrogenation at high reaction temperature
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