A comparative study of transistors based on wurtzite and zincblende InAs nanowires
We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs...
| Main Authors: | , , , , , |
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| Format: | Conference item |
| Published: |
2010
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