A new type of defect on {11(2)over-bar0} planes in beta-Si3N4 produced by neutron irradiation
Главные авторы: | Akiyoshi, M, Yano, T, Jenkins, M |
---|---|
Формат: | Journal article |
Опубликовано: |
2001
|
Схожие документы
-
A structural model of defects in beta-Si3N4 produced by neutron irradiation
по: Akiyoshi, M, и др.
Опубликовано: (2001) -
Defects annihilation behavior of neutron-irradiated SiC ceramics densified by liquid-phase-assisted method after post-irradiation annealing
по: Mohd Idzat Idris, и др.
Опубликовано: (2016-12-01) -
Effect of microstructure and neutron irradiation defects on deuterium retention in SiC
по: Leide, A, и др.
Опубликовано: (2025) -
Effect of microstructure and neutron irradiation defects on deuterium retention in SiC
по: Alex Leide, и др.
Опубликовано: (2025-02-01) -
Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons
по: A. P. Dolgolenko, и др.
Опубликовано: (2007-06-01)