A new type of defect on {11(2)over-bar0} planes in beta-Si3N4 produced by neutron irradiation

Những quyển sách tương tự

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• Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons
  Bằng: A. P. Dolgolenko, et al.
  Được phát hành: (2007-06-01)