Photo-induced optical activity in phase-change memory materials

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular di...

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Xehetasun bibliografikoak
Egile Nagusiak: Borisenko, K, Shanmugam, J, Williams, B, Ewart, P, Gholipour, B, Hewak, D, Hussain, R, Jávorfi, T, Siligardi, G, Kirkland, A
Formatua: Journal article
Hizkuntza:English
Argitaratua: Springer Nature 2015