Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic principles are explained. Atom probe provides 3-dimensional chemical maps with nanoscale resolution. For semiconductor research, needle-shaped atom probe samples are produced by focused ion beam lift-out...
| Päätekijät: | , , , |
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
IOP Publishing
2010
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| Aiheet: |