Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic principles are explained. Atom probe provides 3-dimensional chemical maps with nanoscale resolution. For semiconductor research, needle-shaped atom probe samples are produced by focused ion beam lift-out...
| Główni autorzy: | , , , |
|---|---|
| Format: | Journal article |
| Język: | English |
| Wydane: |
IOP Publishing
2010
|
| Hasła przedmiotowe: |
Search Result 1
Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
Wydane 2010
Conference item