Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography

Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic principles are explained. Atom probe provides 3-dimensional chemical maps with nanoscale resolution. For semiconductor research, needle-shaped atom probe samples are produced by focused ion beam lift-out...

وصف كامل

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Müller, M, Saxey, D, Cerezo, A, Smith, G
التنسيق: Journal article
اللغة:English
منشور في: IOP Publishing 2010
الموضوعات: