Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography

Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic principles are explained. Atom probe provides 3-dimensional chemical maps with nanoscale resolution. For semiconductor research, needle-shaped atom probe samples are produced by focused ion beam lift-out...

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Xehetasun bibliografikoak
Egile Nagusiak: Müller, M, Saxey, D, Cerezo, A, Smith, G
Formatua: Journal article
Hizkuntza:English
Argitaratua: IOP Publishing 2010
Gaiak: