Tailoring the topological surface state in ultrathin alpha -Sn(111) films
We report on the electronic structure of α-Sn films in the low thickness regime grown on InSb(111)A. High-resolution angle-resolved photoemission (ARPES), enhanced at low photon energies, allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist bet...
| Үндсэн зохиолчид: | , , , , , , , , , , , , |
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| Формат: | Journal article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
American Physical Society
2019
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