Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation
Results are presented of the EBIC contrast and hence recombination efficiency of a large variety of extended defects. It is shown that the recombination behaviour can be split into three categories associated with strong, medium and weak contrast defects respectively and that this behaviour can be e...
| Main Authors: | , , |
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| Format: | Conference item |
| Published: |
1997
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