Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation
Results are presented of the EBIC contrast and hence recombination efficiency of a large variety of extended defects. It is shown that the recombination behaviour can be split into three categories associated with strong, medium and weak contrast defects respectively and that this behaviour can be e...
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| Format: | Conference item |
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1997
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| _version_ | 1797077207982538752 |
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| author | Wilshaw, P Blood, A Braban, C |
| author_facet | Wilshaw, P Blood, A Braban, C |
| author_sort | Wilshaw, P |
| collection | OXFORD |
| description | Results are presented of the EBIC contrast and hence recombination efficiency of a large variety of extended defects. It is shown that the recombination behaviour can be split into three categories associated with strong, medium and weak contrast defects respectively and that this behaviour can be explained in terms of the position of the defect states in the band gap. It is shown that hydrogen passivation is extremely successful at removing deep levels in the band gap, even when these are associated with precipitates, but that it has little effect on shallow levels. |
| first_indexed | 2024-03-07T00:14:36Z |
| format | Conference item |
| id | oxford-uuid:7a62f78e-625f-4bbb-bdd8-d1e64398e1d8 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T00:14:36Z |
| publishDate | 1997 |
| record_format | dspace |
| spelling | oxford-uuid:7a62f78e-625f-4bbb-bdd8-d1e64398e1d82022-03-26T20:43:42ZCarrier recombination at defects in silicon: The effect of transition metals and hydrogen passivationConference itemhttp://purl.org/coar/resource_type/c_5794uuid:7a62f78e-625f-4bbb-bdd8-d1e64398e1d8Symplectic Elements at Oxford1997Wilshaw, PBlood, ABraban, CResults are presented of the EBIC contrast and hence recombination efficiency of a large variety of extended defects. It is shown that the recombination behaviour can be split into three categories associated with strong, medium and weak contrast defects respectively and that this behaviour can be explained in terms of the position of the defect states in the band gap. It is shown that hydrogen passivation is extremely successful at removing deep levels in the band gap, even when these are associated with precipitates, but that it has little effect on shallow levels. |
| spellingShingle | Wilshaw, P Blood, A Braban, C Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation |
| title | Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation |
| title_full | Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation |
| title_fullStr | Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation |
| title_full_unstemmed | Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation |
| title_short | Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation |
| title_sort | carrier recombination at defects in silicon the effect of transition metals and hydrogen passivation |
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