The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE

The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE

The ternary III-V semiconductor Ga0.52In0.48P grown on GaAs substrate has been studied for visible wavelength light sources for information processing, laser printing and compact disk systems. In epilayers grown by MOCVD or Solid Source MBE, optical emission with reduced energy is known to originate...

Podrobná bibliografie
Hlavní autoři:	Meenakarn, C, Staton-Bevan, A, Dawson, MD, Duggan, G, Kean, A, Najda, S
Médium:	Conference item
Vydáno:	1997

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