The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE

The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE

The ternary III-V semiconductor Ga0.52In0.48P grown on GaAs substrate has been studied for visible wavelength light sources for information processing, laser printing and compact disk systems. In epilayers grown by MOCVD or Solid Source MBE, optical emission with reduced energy is known to originate...

Detaylı Bibliyografya
Asıl Yazarlar:	Meenakarn, C, Staton-Bevan, A, Dawson, MD, Duggan, G, Kean, A, Najda, S
Materyal Türü:	Conference item
Baskı/Yayın Bilgisi:	1997

Benzer Materyaller

INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
Yazar:: Rogers, D, ve diğerleri
Baskı/Yayın Bilgisi: (1986)

Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments
Yazar:: Ronel Christian Roca, ve diğerleri
Baskı/Yayın Bilgisi: (2019-07-01)

MBE growth and investigation of (001) GaAs surfaces using SIMS
Yazar:: Croydon, W. F.
Baskı/Yayın Bilgisi: (1985)

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE
Yazar:: Henini Mohamed, ve diğerleri
Baskı/Yayın Bilgisi: (2011-01-01)

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer
Yazar:: Wei-Cheng Kuo, ve diğerleri
Baskı/Yayın Bilgisi: (2016-01-01)

Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers
Yazar:: D. Deutsch, ve diğerleri
Baskı/Yayın Bilgisi: (2023-05-01)

Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate
Yazar:: Małgorzata Kopytko, ve diğerleri
Baskı/Yayın Bilgisi: (2019-10-01)

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
Yazar:: RussellHarriott, J, ve diğerleri
Baskı/Yayın Bilgisi: (1996)

A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
Yazar:: Ming Rong Lee, ve diğerleri
Baskı/Yayın Bilgisi: (2001-01-01)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
Yazar:: Chuah , Lee Siang
Baskı/Yayın Bilgisi: (2009)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
Yazar:: Li, Chaoyong.
Baskı/Yayın Bilgisi: (2009)

Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells
Yazar:: Zhiwei Li, ve diğerleri
Baskı/Yayın Bilgisi: (2021-09-01)

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
Yazar:: Wen Hua-Chiang, ve diğerleri
Baskı/Yayın Bilgisi: (2010-01-01)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
Yazar:: Wang Zhiming, ve diğerleri
Baskı/Yayın Bilgisi: (2010-01-01)

The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation
Yazar:: Xiao Hu, ve diğerleri
Baskı/Yayın Bilgisi: (2024-01-01)

Lomer-Cottrell misfit dislocations in [001]In0.2Ga0.8As/GaAs single heterostructures
Yazar:: Zou, J, ve diğerleri
Baskı/Yayın Bilgisi: (1996)

Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
Yazar:: Frigeri C, ve diğerleri
Baskı/Yayın Bilgisi: (2010-01-01)

Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength
Yazar:: Megat Muhammad Ikhsan Megat Hasnan, ve diğerleri
Baskı/Yayın Bilgisi: (2022)

Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
Yazar:: Md Taib, Muhamad Ikram, ve diğerleri
Baskı/Yayın Bilgisi: (2019)

Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 μm wavelength
Yazar:: Megat Hasnan, M. M. I., ve diğerleri
Baskı/Yayın Bilgisi: (2022)

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
Yazar:: Artur Tuktamyshev, ve diğerleri
Baskı/Yayın Bilgisi: (2021-03-01)

Characterization of Cd1-xZnx Te (0≤x≤1) Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates*
Yazar:: Joel Díaz-Reyes, ve diğerleri
Baskı/Yayın Bilgisi: (2019-06-01)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
Yazar:: Tyan, S, ve diğerleri
Baskı/Yayın Bilgisi: (2000)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots /
Yazar:: Yussof Wahab, author, ve diğerleri
Baskı/Yayın Bilgisi: (2006)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
Yazar:: Wahab, Yussof, ve diğerleri
Baskı/Yayın Bilgisi: (2006)

Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
Yazar:: Wahab, Yussof, ve diğerleri
Baskı/Yayın Bilgisi: (2006)

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications
Yazar:: V. Braza, ve diğerleri
Baskı/Yayın Bilgisi: (2017-05-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
Yazar:: Zou, J, ve diğerleri
Baskı/Yayın Bilgisi: (1999)

New Submicron Low Gate Leakage In<sub>0.52</sub>Al<sub>0.48</sub>As-In<sub>0.7</sub>Ga<sub>0.3</sub>As pHEMT for Low-Noise Applications
Yazar:: Mohamed Fauzi Packeer Mohamed, ve diğerleri
Baskı/Yayın Bilgisi: (2021-11-01)

Lattice Matched AlAs/GaAs/GaAs0.94Bi0.0583/GaAs0.91Bi0.0857 Multi-Junction Solar Cell with Optimized Thickness: A Theoretical Approach
Yazar:: ALAMGIR Badsha, ve diğerleri
Baskı/Yayın Bilgisi: (2020-10-01)

Strain-controlled switching kinetics of epitaxial PbZr0.52Ti0.48O3 films
Yazar:: A Herklotz, ve diğerleri
Baskı/Yayın Bilgisi: (2013-01-01)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Yazar:: Kang, J, ve diğerleri
Baskı/Yayın Bilgisi: (2011)

Vertically standing Ge nanowires on GaAs(110) substrates
Yazar:: Song, MS, ve diğerleri
Baskı/Yayın Bilgisi: (2008)

Novel growth and properties of GaAs nanowires on Si substrates.
Yazar:: Kang, J, ve diğerleri
Baskı/Yayın Bilgisi: (2010)

GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates
Yazar:: Evgeniy Klimov, ve diğerleri
Baskı/Yayın Bilgisi: (2022-12-01)

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
Yazar:: Pan Guoqiang, ve diğerleri
Baskı/Yayın Bilgisi: (2011-01-01)

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates
Yazar:: Shafi M, ve diğerleri
Baskı/Yayın Bilgisi: (2010-01-01)

Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44
Yazar:: Shumithira Gandan, ve diğerleri
Baskı/Yayın Bilgisi: (2023-04-01)

Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate
Yazar:: Chia, Ching Kean, ve diğerleri
Baskı/Yayın Bilgisi: (2014)

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
Yazar:: Bouravleuv AD, ve diğerleri
Baskı/Yayın Bilgisi: (2009-01-01)